Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material

MOCVD growth of GaN-based high electron mobility transistor structures

A Genetic-Neural-Network Modeling Approach for Self-Heating in GaN High Electron Mobility Transistors

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects

Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects. The simulated electrical characteristi...

AlGaN/GaN High-Electron-Mobility Transistors on Different Substrates

The performance ofaluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTS) diamond and silicon carbide (SiC) substrates is examined. Additionally, the temperature rise in similar devices on diamond and SiC substrates is reported. Recently, identical AlGaN/GaN HEMTs have been fabricated at Cornell NanoScale Science & Technology Facility (CNF) on diamond, bu...